Antimony Selenide (Sb2Se3) Crystal

High-Quality Sb₂Se₃ Single Crystals for Advanced Electronic and Optoelectronic Applications

Antimony Selenide Crystal

Crystal Overview

We supply large-area, high-purity antimony selenide (Sb₂Se₃) single crystals. These crystals exhibit excellent structural and electronic quality and are delivered exfoliation-ready for immediate use in research and device fabrication.

The Sb₂Se₃ single crystals are synthesized using Direct Vapor Transport (DVT) techniques, with growth parameters carefully optimized to ensure precise control over crystal phase, stoichiometry, and defect density. Post-growth refinement and annealing procedures further enhance structural order and phase purity.

Our crystals exhibit the following key properties:

  • High crystallinity and phase purity: Verified by X-ray diffraction (XRD) and 4-angle rocking curve measurements, confirming orthorhombic (Pnma) structure with excellent in-plane alignment of quasi-one-dimensional ribbons.
  • Exfoliation-ready layered/ribbon structure: Sb₂Se₃ cleaves along its (001) plane to form thin, uniform ribbons or flakes with smooth surfaces, suitable for low-dimensional material studies and device fabrication.
  • Well-defined electronic structure: Bulk crystals exhibit a direct band gap of ~1.1–1.3 eV, making them ideal for photovoltaics, photodetectors, and other optoelectronic applications.
  • Controlled phase composition: Our synthesis ensures phase-pure Sb₂Se₃, avoiding secondary phases that can degrade device performance, and providing reproducible electronic and optical properties.
  • Anisotropic transport properties: Due to its ribbon-like crystal structure, Sb₂Se₃ shows strong directional dependence in electrical and thermal transport, which is advantageous for high-efficiency photovoltaic and thermoelectric applications.

With their large size, superior crystallinity, and well-defined electronic properties, these Sb₂Se₃ single crystals provide an ideal platform for fundamental studies, optoelectronic device development, and high-performance energy conversion applications.

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Technical Data

Chemical Formula Sb₂Se₃
Crystal Size ~5–6 mm
Bandgap 1.1–1.3 eV (direct)
Growth Method DVT (Direct Vapor Transport)
Crystal Structure Orthorhombic (Pnma)
Conductivity Type P-type semiconductor
Melting Point ~611 °C
Purity 99.999%

Additional Info

Elements Sb, Se
Element Detail Antimony, Selenium
Formula Sb₂Se₃
Material Class V–VI Semiconductor
Properties Semiconductor, Layered/Ribbon
Doping Undoped

Need custom orientation or doping?

Share your specification (phase, wafer size, target carrier profile) and we will propose a tailored growth and wafering plan with lead times and QA data.

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