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High-Performance Silicon Carbide Substrates for Next-Generation Power Electronics

At QuadQuantum, we manufacture semiconductor-grade Silicon Carbide (SiC) substrates engineered to meet the demanding requirements of modern power electronics. Our focus on advanced crystal growth, precision wafer engineering, and rigorous quality control enables reliable, high-performance materials aligned with global semiconductor standards.

Our SiC substrates are designed to support high-efficiency applications across electric mobility, renewable energy systems, industrial power modules, and advanced RF technologies.

Conductive Silicon Carbide (SiC) Substrates

QuadQuantum manufactures high-performance 4H-SiC conductive substrates engineered for advanced power semiconductor devices. These substrates are designed to deliver superior thermal conductivity, high breakdown voltage, and reliable performance for high-efficiency power electronics.

6-Inch Conductive 4H-SiC Substrates

Typical Specifications

  • Polytype: 4H-SiC
  • Diameter: 150 mm (6 inch)
  • Conductivity Type: N-type (Conductive)
  • Orientation: On-axis / Off-axis (4° typical)
  • Surface Finish: Double-side polished (DSP)
  • Applications: MOSFETs, Schottky diodes, EV power modules
8-Inch Conductive 4H-SiC Substrates

Typical Specifications

  • Polytype: 4H-SiC
  • Diameter: 200 mm (8 inch)
  • Conductivity Type: N-type (Conductive)
  • Orientation: Off-axis optimized for epitaxy
  • High flatness and uniformity
  • Semiconductor-grade surface quality
  • Designed for scalable high-volume manufacturing
  • Applications: Advanced power electronics & renewable energy systems
Semi-Insulating Silicon Carbide (SiC) Substrates

Our semi-insulating substrates are engineered for RF, high-frequency, and advanced electronic applications requiring excellent electrical isolation and material stability.

6-Inch Semi-Insulating 4H-SiC Substrates

Typical Specifications

  • Polytype: 4H-SiC
  • Diameter: 150 mm (6 inch)
  • Orientation: On-axis / Off-axis options
  • Low dislocation density
  • Precision polished surface
  • Applications: RF devices, high-frequency electronics
8-Inch Semi-Insulating 4H-SiC Substrates

Typical Specifications

  • Polytype: 4H-SiC
  • Diameter: 200 mm (8 inch)
  • Advanced crystal uniformity
  • Epitaxial-ready surface quality
  • Designed for next-generation communication and RF technologies
Advanced Manufacturing Capability

QuadQuantum's manufacturing infrastructure integrates induction and resistance crystal growth systems enabling dedicated production lines for conductive and semi-insulating 4HSiC substrates across 6-inch and 8-inch formats, ensuring scalability, consistency, and global semiconductor-grade quality.