High-Quality In₂Se₃ Nanopowder for Optoelectronic, Photonic & Energy Applications
Our In₂Se₃ nanopowder is produced using mechanical ball milling, which reduces bulk In₂Se₃ into uniform nanosized particles while preserving its quasi-2D layered structure. This results in high surface area, enhanced optical properties, and excellent applicability in electronic and photonic devices.
Key Features:
| Chemical Formula | In₂Se₃ |
|---|---|
| Particle Size | 30-90 nm |
| Bandgap | 1.3-2.0 eV |
| Production Method | Mechanical Ball Milling |
| Crystal Structure | α-phase or β-phase |
| Conductivity | n- or p-type |
| Melting Point | ~ 890 °C |
| Purity | 99.9% |
| Form | Nanopowder |
| Material Class | III–VI Semiconductor (M₂X₃) |
| Properties | Quasi-2D layered semiconductor |
| Doping | Undoped |