Indium Selenide (In2Se3) NanoPowder

High-Quality In₂Se₃ Nanopowder for Optoelectronic, Photonic & Energy Applications

Indium Selenide NanoPowder

NanoPowder Overview

Our In₂Se₃ nanopowder is produced using mechanical ball milling, which reduces bulk In₂Se₃ into uniform nanosized particles while preserving its quasi-2D layered structure. This results in high surface area, enhanced optical properties, and excellent applicability in electronic and photonic devices.

Key Features:

  • Nanoscale morphology: 30–90 nm particle size achievable by controlling milling parameters.
  • Phase retention: α/β phases maintained during milling; slight lattice strain enhances reactivity.
  • Enhanced optical properties: Bandgap tunable 1.3–2.0 eV due to size effects.
  • Good dispersibility: Forms stable powders for thin-film fabrication and solid-state reactions.
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Technical Data

Chemical Formula In₂Se₃
Particle Size 30-90 nm
Bandgap 1.3-2.0 eV
Production Method Mechanical Ball Milling
Crystal Structure α-phase or β-phase
Conductivity n- or p-type
Melting Point ~ 890 °C
Purity 99.9%
Form Nanopowder
Material Class III–VI Semiconductor (M₂X₃)
Properties Quasi-2D layered semiconductor
Doping Undoped