Molybdenum Disulfide (MoS2) Crystal

High-Quality MoS₂ Single Crystals for Advanced Electronic and Optoelectronic Applications

Molybdenum Disulfide Crystal

Crystal Overview

We supply large-area, high-purity molybdenum disulfide (MoS₂) single crystals. These crystals exhibit superior structural and electronic quality and are delivered exfoliation-ready for immediate use in research and device fabrication.

The MoS₂ single crystals are synthesized using Chemical Vapor Transport (CVT) / Direct Vapor Transport (DVT) techniques, with growth parameters carefully optimized to ensure precise control over crystal phase, stoichiometry, and defect density. Post-growth annealing and refinement procedures further enhance structural order and phase purity.

Our crystals exhibit the following key properties:

  • High crystallinity and phase purity: Verified by X-ray diffraction (XRD) and Raman spectroscopy, confirming the 2H-MoS₂ hexagonal structure with excellent in-plane alignment.
  • Exfoliation-ready layered structure: The material cleaves cleanly into thin monolayers or few-layer flakes with atomically smooth surfaces, ideal for two-dimensional materials research.
  • Well-defined electronic structure: Bulk crystals exhibit an indirect band gap of ~1.2 eV, while monolayers show a direct band gap of ~1.8-1.9 eV, making them highly suitable for electronic, optoelectronic, and photonic applications.
  • Controlled phase composition: Our synthesis ensures phase-pure 2H-MoS₂, avoiding metallic 1T phases, and provides reproducible electronic and optical properties.
  • Exceptional chemical and thermal stability: MoS₂’s layered structure ensures robustness under device fabrication and operation conditions.

With their large size, high crystallinity, and well-defined electronic properties, these MoS₂ single crystals provide an ideal platform for fundamental studies, next-generation electronic devices, and high-performance optoelectronic applications

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Technical Data

Chemical Formula MoS₂
Crystal Size ~5–7 mm
Bandgap Bulk: 1.2 eV (indirect); Monolayer: 1.8–1.9 eV (direct)
Growth Method CVT / DVT (Chemical/Direct Vapor Transport)
Crystal Structure Hexagonal (2H-MoS₂, P6₃/mmc)
Conductivity Type n-type semiconductor
Melting Point ~1185 °C
Purity 99.999%

Additional Info

Elements Mo, S
Element Detail Molybdenum, Sulfur
Formula MoS₂
Material Class 2D TMDC Semiconductor
Properties Semiconductor, Layered
Doping Undoped