High-Quality MoS₂ Single Crystals for Advanced Electronic and Optoelectronic Applications
We supply large-area, high-purity molybdenum disulfide (MoS₂) single crystals. These crystals exhibit superior structural and electronic quality and are delivered exfoliation-ready for immediate use in research and device fabrication.
The MoS₂ single crystals are synthesized using Chemical Vapor Transport (CVT) / Direct Vapor Transport (DVT) techniques, with growth parameters carefully optimized to ensure precise control over crystal phase, stoichiometry, and defect density. Post-growth annealing and refinement procedures further enhance structural order and phase purity.
Our crystals exhibit the following key properties:
With their large size, high crystallinity, and well-defined electronic properties, these MoS₂ single crystals provide an ideal platform for fundamental studies, next-generation electronic devices, and high-performance optoelectronic applications
Purchase| Chemical Formula | MoS₂ |
|---|---|
| Crystal Size | ~5–7 mm |
| Bandgap | Bulk: 1.2 eV (indirect); Monolayer: 1.8–1.9 eV (direct) |
| Growth Method | CVT / DVT (Chemical/Direct Vapor Transport) |
| Crystal Structure | Hexagonal (2H-MoS₂, P6₃/mmc) |
| Conductivity Type | n-type semiconductor |
| Melting Point | ~1185 °C |
| Purity | 99.999% |
| Elements | Mo, S |
|---|---|
| Element Detail | Molybdenum, Sulfur |
| Formula | MoS₂ |
| Material Class | 2D TMDC Semiconductor |
| Properties | Semiconductor, Layered |
| Doping | Undoped |