Tin Selenide (SnSe) NanoPowder

High-Performance SnSe Nanopowder for Thermoelectric, IR & Energy Conversion Applications

Tin Selenide NanoPowder

NanoPowder Overview

Our SnSe nanopowder is prepared via mechanical ball milling, which reduces bulk SnSe into nanosized grains while preserving its orthorhombic layered structure. The nanopowder exhibits high surface area and enhanced grain-boundary effects, making it ideal for thermoelectric and optoelectronic applications.

Key Properties:

  • Nanoscale grains: 40–120 nm size achievable by adjusting milling time and speed.
  • Orthorhombic structure retained: Layered quasi-2D structure maintained.
  • Thermoelectric active: Nano-grains reduce thermal conductivity, improving performance.
  • High stability: Suitable for sintering, pellet formation, and thin-film deposition.
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Technical Data

Chemical Formula SnSe
Particle Size 40-120 nm
Bandgap 1.0-1.3 eV
Production Method Mechanical Ball Milling
Crystal Structure Orthorhombic
Conductivity Type p-type semiconductor
Melting Point ~ 861 °C
Purity 99.9%
Form Nanopowder
Material Class IV–VI Semiconductor
Properties Quasi-2D layered, Thermoelectric
Doping Undoped