High-Performance SnSe Nanopowder for Thermoelectric, IR & Energy Conversion Applications
Our SnSe nanopowder is prepared via mechanical ball milling, which reduces bulk SnSe into nanosized grains while preserving its orthorhombic layered structure. The nanopowder exhibits high surface area and enhanced grain-boundary effects, making it ideal for thermoelectric and optoelectronic applications.
Key Properties:
| Chemical Formula | SnSe |
|---|---|
| Particle Size | 40-120 nm |
| Bandgap | 1.0-1.3 eV |
| Production Method | Mechanical Ball Milling |
| Crystal Structure | Orthorhombic |
| Conductivity Type | p-type semiconductor |
| Melting Point | ~ 861 °C |
| Purity | 99.9% |
| Form | Nanopowder |
| Material Class | IV–VI Semiconductor |
| Properties | Quasi-2D layered, Thermoelectric |
| Doping | Undoped |